With the CVC 601 series Sputter System there are up to 8 process stations with up to 9 process modes available for your specified combination of sputter accessories.
Film uniformity of +/-5% over the entire Rotostrate 7" annulus is readily achieved with single axis, simple rotation. Grain size is easily controlled by adjustments of sputtering parameters.
Pinhole defects and particulate contamination are minimized with the sputter up configuration of the CVC 601 and its unchallenged ability to remain clean in normal production environments. The CVC 601 is designed to fit into a clean room or laminar flow hood to maximize process cleanliness. The internal chamber mechanisms are easy to lift out (without special tools) for rapid interchange with clean parts. It's so easy, you can clean the system as often as your process requires and still maintain production schedules.
 | 6" Wafer Handling CapabilityChangeover from 2" to 3", 4", 5", 6" diameter substrates or even other geometric configurations (squares, rectangles) within seconds. QCTª Quick Change Target DesignDC target change accomplished in less than ten minutes. |
Sputter two or more dissimilar materials simultaneously for complete control of film stoichiometry.
The 601 series is available in a Load Lock version. The 601 standard system may be upgraded to the 601 Lid Lokª version with a retrofit at a later date as your process requirements change.
System Control Technology